Konstantinos Zekentes: search on Z-Library

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1

TCAD models of the temperature and doping dependence of the bandgap and low field carrier mobility in 4H-SiC

Stefanakis, Dionysios, Zekentes, Konstantinos

Journal:

Microelectronic Engineering

Year:

2014

Language:

english

File:

PDF, 2.12 MB

english, 2014

2

Compact Modeling of SiC and GaN Junction FETs at High Temperature

Makris, Nikolaos, Zekentes, Konstantinos, Bucher, Matthias

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 1.70 MB

english, 2019

3

Growth of SiC Microwires through Si Microwires Carburization

Ollivier, Maelig, Mantoux, Arnaud, Bano, Edwige, Rogdakis, Konstantinos, Zekentes, Konstantinos, Baron, Thierry, Latu-Romain, Laurence

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 2.73 MB

english, 2011

4

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Contreras, Sylvie, Konczewicz, Leszek, Kwasnicki, Pawel, Arvinte, Roxana, Peyre, Herve, Chassagne, Thierry, Zielinski, Marcin, Kayambaki, Maria, Juillaguet, Sandrine, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 961 KB

english, 2016

5

4H-SiC p-Type Doping Determination from Secondary Electrons Imaging

Kayambaki, Maria, Makris, Nikolaos, Tsagaraki, Katerina, Peyré, Hervé, Stavrinidis, Antonis, Konstantinidis, George, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2019

Language:

english

File:

PDF, 276 KB

english, 2019

6

Si nanowire p-FET with asymmetric source–drain characteristics

Sang-Kwon Lee, Seung-Yong Lee, Konstantinos Rogdakis, Chan-Oh Jang, Dong-Joo Kim, Edwige Bano, Konstantinos Zekentes

Journal:

Solid State Communications

Year:

2009

Language:

english

File:

PDF, 2.61 MB

english, 2009

7

Isothermal I-V Characteristics of 4 H-SiC p-n Diodes with Low Series Differential Resistivity at Avalanche Breakdown

Vassilevski, Konstantin V., Zekentes, Konstantinos, Zorenko, Alexandr V., Romanov, Leonid P.

Journal:

MRS Proceedings

Year:

2000

Language:

english

File:

PDF, 387 KB

english, 2000

8

Field Effect Transistors Based on Catalyst-Free Grown 3C-SiC Nanowires

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, M., Cornu, David, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 373 KB

english, 2010

9

Rectifying Source and Drain Contacts for Effective Carrier Transport Modulation of Extremely Doped SiC Nanowire FETs

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

IEEE Transactions on Nanotechnology

Year:

2011

Language:

english

File:

PDF, 520 KB

english, 2011

10

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts

Zekentes, Konstantinos, Vassilevski, Konstantin, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Peyre, Herve, Makris, Nikolaos, Bucher,

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 432 KB

english, 2016

11

[IEEE 2006 European Microwave Conference - Manchester, UK (2006.09.10-2006.09.15)] 2006 European Microwave Conference - Microwave p-i-n diodes and switches based on 4H-SiC

Zekentes, Konstantinos, Camara, Nicolas, Konstantinidis, George, Romanov, Leonid, Kirillov, Aleksey, Boltovets, Mykola

Year:

2006

Language:

english

File:

PDF, 4.11 MB

english, 2006

12

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

Zekentes, Konstantinos, Tsagaraki, Katerina, Androulidaki, Maria, Kayambaki, Maria, Stavrinidis, Antonis, Peyre, Hervé, Camassel, Jean

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 360 KB

english, 2012

13

Material Limitations for the Development of High Performance SiC NWFETs

Zekentes, Konstantinos, Rogdakis, Konstantinos, Bano, Edwige

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 404 KB

english, 2012

14

Theoretical Comparison of 3C-SiC and Si Nanowire FETs in Ballistic Regime

Rogdakis, Konstantinos, Bescond, Marc, Bano, Edwige, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 335 KB

english, 2009

15

4H-SiC VJFETs with Self-Aligned Contacts

Zekentes, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Vamvoukakis, Konstantinos, Vassakis, Emmanouil, Vassilevski, Konstantin, Horsfall, Alton B., Wright, Nick G., Br

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.41 MB

english, 2015

16

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Demir, İlkay, Robin, Yoann, McClintock, Ryan, Elagoz, Sezai, Zekentes, Konstantinos, Razeghi, Manijeh

Journal:

physica status solidi (a)

Year:

2017

File:

PDF, 878 KB

2017

17

X-band Silicon Carbide IMPATT Oscillator

Vassilevski, Konstantin V., Zorenko, Alexandr V., Zekentes, Konstantinos

Journal:

MRS Proceedings

Year:

2001

Language:

english

File:

PDF, 133 KB

english, 2001

18

Spring E-MRS 2016 Symposium L “Wide bandgap materials for electron devices”

Cordier, Yvon, Alquier, Daniel, Zekentes, Konstantinos

Journal:

physica status solidi (a)

Year:

2017

Language:

english

File:

PDF, 71 KB

english, 2017

19

Improved Al/Si ohmic contacts to p-type 4H-SiC

Roumen Kakanakov, Liliana Kassamakova, Ivan Kassamakov, Konstantinos Zekentes, Nikolay Kuznetsov

Journal:

Materials Science and Engineering: B

Year:

2001

Language:

english

File:

PDF, 165 KB

english, 2001

20

Fabrication Issues of 4H-SiC Static Induction Transistors

Stavrinidis, Antonis, Konstantinidis, George, Kayambaki, Maria, Cayrel, Frédéric, Alquier, Daniel, Gao, Zhuo, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 664 KB

english, 2012

21

Salicide-Like Process for the Formation of Gate and Source Contacts in 4H-SiC TSI-VJFETs

Stavrinidis, Antonis, Konstantinidis, George, Vamvoukakis, Konstantinos, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 1.38 MB

english, 2017

22

Si NWs Conversion to Si-SiC Core-Shell NWs by MBE

Lloret, Fernando, Araujo, D., Villar, M.P., Liu, L., Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 2.93 MB

english, 2015

23

Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy

Demir, İlkay, Robin, Yoann, McClintock, Ryan, Elagoz, Sezai, Zekentes, Konstantinos, Razeghi, Manijeh

Journal:

physica status solidi (a)

Year:

2016

Language:

english

File:

PDF, 1.74 MB

english, 2016

24

Fabrication of Ion-Implanted Si Nanowire p-FETs

Lee, Seung-Yong, Jang, Chan-Oh, Kim, Dong-Joo, Hyung, Jung-Hwan, Rogdakis, Konstantinos, Bano, Edwige, Zekentes, Konstantinos, Lee, Sang-Kwon

Journal:

The Journal of Physical Chemistry C

Year:

2008

Language:

english

File:

PDF, 1.34 MB

english, 2008

25

Capacitances in 4H-SiC TSI-VJFETs

Kayambaki, Maria, Vamvoukakis, Konstantinos, Stavrinidis, Antonis, Konstantinidis, George, Kornilios, Nikolaos, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2017

Language:

english

File:

PDF, 546 KB

english, 2017

26

The Formation of New Periodicities after N-Implantation in 4H- and 6H-SiC Samples

Zekentes, Konstantinos, Tsagaraki, Katerina, Breza, Aikaterini, Frangis, Nikolaos

Journal:

Materials Science Forum

Year:

2013

Language:

english

File:

PDF, 306 KB

english, 2013

27

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

Rogdakis, Konstantinos, Bano, Edwige, Montes, Laurent, Bechelany, Mikhael, Cornu, David, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2011

Language:

english

File:

PDF, 610 KB

english, 2011

28

Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics

Rogdakis, Konstantinos, Lee, Seoung Yong, Kim, Dong Joo, Lee, Sang Kwon, Bano, Edwige, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 1.13 MB

english, 2009

29

Microwave Switches and Modulators Based on 4H-SiC p-i-n Diodes

Zekentes, Konstantinos, Basanets, Volodymyr V., Boltovets, Mykola S., Kryvutsa, Valentyn A., Orechovskij, Volodymyr O., Simonchuk, Vasyl I., Zorenko, Alexander V., Romanov, Leonid P., Kirillov, Alekse

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

30

Theoretical comparison of 3C-SiC and Si nanowire FETs in ballistic and diffusive regimes

Rogdakis, Konstantinos, Bescond, Marc, Bano, Edwige, Zekentes, Konstantinos

Journal:

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

31

Comparison of Bottom-Up and Top-Down 3C-SiC NWFETs

Choi, Ji Hoon, Bano, Edwige, Henry, Anne, Attolini, Giovanni, Zekentes, Konstantinos

Journal:

Materials Science Forum

Year:

2016

Language:

english

File:

PDF, 958 KB

english, 2016

32

Preface

Zekentes, Konstantinos

Journal:

Diamond and Related Materials

Year:

1997

Language:

english

File:

PDF, 77 KB

english, 1997

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